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Adv. mater. by Professor liushengzhong of Shaanxi Normal University: 40.1% ! With the rapid development of handheld devices, wearable electronic products and IOT, tens of billions of electronic devices for low-power indoor applications need a lot of off power. Solar cells, which have been proved to be effective in converting low-intensity light energy into micro watt to megawatt levels in the indoor environment, are recognized as an ideal choice for driving low-power electronic devices when the safety valve is not properly conditioned. Perovskite solar cells have attracted extensive attention because of their adjustable band gap and high absorption coefficient. During the formation of perovskite films, a large number of defects will inevitably form, resulting in serious non radiation recombination losses, which greatly reduces the performance of devices. Therefore, reducing the non radiative recombination loss is a major challenge for the application of perovskite solar cells in low light environment

recently, the team of Professor liushengzhong from the school of materials of Shaanxi Normal University published a paper entitled "40.1% record low light solar cell efficiency by holographic trap activation using micrometer thick perovskite film" on advanced materials. In this paper, micron thick perovskite films were prepared by two-step method. Using two methods of bulk doping and surface passivation, the bulk defects and surface defects are greatly reduced, and the average carrier life of perovskite films is reduced from 1.41 μ S increased to 7.72 μ s. Finally, the VOC and PCE of the device have been greatly improved. The research was supported by the National Natural Science Foundation of China and the national key research and development plan

Figure 1 (a) preparation process of perovskite film, (b) structure diagram of planar perovskite battery device, (c) J-V curve of comparison and target device and (d) PCE distribution diagram of bicycle

Figure 2 (a) steady state photoluminescence spectra of perovskite films deposited on glass substrates, (b) time-resolved photoluminescence decay curves, (c) C-V curves, and (d) impedance diagrams of basic and optimized devices

Figure 3 (a) XRD patterns of (fapbi3) 0.92 (mapbbr3) 0.08 films with different GA molar ratios, (b) (fapbi3) 0.92 (mapbbr3) 0.08 perovskite films and (c) SEM images of GA films containing 8% mol2 and sand slurry tensile testing machine. The scale of all photos is 1 μ m. (d) UV Vis absorption spectra of (fapbi3) 0.92 (mapbbr3) 0.08 films containing different concentrations of GA, (E) steady-state photoluminescence spectra of films without GA and containing 8% mol GA, and (f) time-resolved photoluminescence attenuation spectra

good linearity

Fig. 4 SEM images of perovskite films doped with GA (a) are not treated with ch3o-peabr, (b) are treated with ch3o-peabr. AFM images of GA Doped Perovskite (c) without and (d) with ch3o-pear coating. (e) And (f) are PL and TRPL of GA containing perovskite films without treatment and after ch3o-pear treatment, respectively

the first author of the paper: he Xilai (Shaanxi Normal University), Chen Jiangzhao (Chongqing University)

corresponding authors of the paper: Ren Xiaodong, Zhao Kui, Liu Shengzhong

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